CSD85312Q3E

Manufacturer Part	CSD85312Q3E
Manufacturer	Texas Instruments
Description	MOSFET 2N-CH 20V 39A 8VSON
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Active
FET Type:	2 N-Channel (Dual) Common Source
FET Feature:	Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	39A
Rds On (Max) @ Id, Vgs:	12.4mOhm @ 10A, 8V
Vgs(th) (Max) @ Id:	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	2390pF @ 10V
Power - Max:	2.5W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	8-VSON (3.3x3.3)

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;